Swarnav Mukhopadhyay

Title: Swarnav Mukhopadhyay and Advances in Group III-Nitride Films.

Introduction

Swarnav Mukhopadhyay is an inventor based in Madison, Wisconsin. His patent work focuses on metal-organic chemical vapor deposition (MOCVD) methods for producing semi-insulating group III-nitride films. He is associated with the Wisconsin Alumni Research Foundation and has 2 patents.

Latest Patents

Mukhopadhyay’s listed patents address methods for controlling dopant introduction during the growth of group III-nitride films.

“Metal-organic chemical vapor deposition of semi-insulating iron-doped group III-nitride films” describes an MOCVD process for growing iron-doped films. The method delays iron introduction until the film begins to coalesce, then introduces the dopant in stages. After the iron precursor flow stops, the nitrogen precursor flow is increased to reduce the iron dopant tail in the film.

“Metal organic chemical vapor deposition of semi-insulating extrinsically carbon-doped group III-nitride films” concerns MOCVD methods for growing carbon-doped films with controlled dopant timing. The described approaches aim to support high crystal quality and favorable surface morphology. Some embodiments introduce the carbon precursor before group III precursors and film formation, while others delay carbon doping until after film coalescence begins.

Career Highlights

The two listed inventions focus on managing dopant timing and flow during semiconductor film growth. Their methods address iron and carbon doping in group III-nitrides, with the stated goal of producing semi-insulating films while maintaining material quality.

Collaborations

Mukhopadhyay is associated with the Wisconsin Alumni Research Foundation. Shubhra S. Pasayat is identified as a coworker.

Conclusion

Swarnav Mukhopadhyay’s patent work centers on MOCVD techniques for controlling iron and carbon doping in semi-insulating group III-nitride films.