The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Sep. 29, 2023
Wisconsin Alumni Research Foundation, Madison, WI (US);
Shubhra S. Pasayat, Middleton, WI (US);
Chirag Gupta, Middleton, WI (US);
Swarnav Mukhopadhyay, Madison, WI (US);
Cheng Liu, Madison, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Methods for growing semi-insulating, carbon-doped (C-doped) group III-nitride on a substrate via metal-organic chemical vapor deposition (MOCVD) are provided. In the methods, the controlled timing of the introduction of carbon dopant precursors in the MOCVD growth process results in semi-insulating group III-nitride having a high crystal quality and surface morphologies. Some embodiments of the methods use a carbon dopant precursor pre-flow step in which a carbon dopant precursor is introduced into the MOCVD reactor chamber prior to the introduction of any group III precursors and the onset of film formation ('Pre-Flow'). In other embodiments of the methods, the introduction of carbon dopant precursors is delayed until after the onset of group III-nitride film coalescence (“Delayed-Doping”).
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile