The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2026
Filed:
May. 09, 2024
Wisconsin Alumni Research Foundation, Madison, WI (US);
Chirag Gupta, Middleton, WI (US);
Swarnav Mukhopadhyay, Madison, WI (US);
Shubhra Shweta Pasayat, Middleton, WI (US);
Wisconsin Alumni Research Foundation, Madison, WI (US);
Abstract
Methods for growing semi-insulating, Fe-doped group III-nitrides on a substrate via MOCVD are provided. In the methods, the introduction of Fe dopants into the growing group III-nitride film is delayed until after the group III-nitride film has begun coalescence. The Fe dopants are then introduced into the growing film in a stepwise process, whereby an Fe dopant precursor is introduced at a high flow rate, followed by the reduction of the Fe dopant precursor flow rate in a subsequent step. Finally, once the Fe dopant precursor flow is stopped, the flow of a nitrogen precursor is increased to reduce the Fe dopant tail in the group III-nitride.
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