Brentwood, MO, United States of America

Swapnil Y Dhumal

This inventor holds 1 USPTO granted patent. Top assignee: Memc Electronic Materials, Inc.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Swapnil Y Dhumal. Retrieved from https://idiyas.com/inventor/swapnil-y-dhumal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Swapnil Y Dhumal

Introduction

Swapnil Y Dhumal is a notable inventor based in Brentwood, MO (US). He has made significant contributions to the field of semiconductor technology, particularly in the processing of silicon-on-insulator (SOI) wafers. His work has implications for various applications in electronics and materials science.

Latest Patents

Dhumal holds a patent for "Methods for processing silicon on insulator wafers." This patent describes methods for etching and depositing an epitaxial layer on a silicon-on-insulator structure. The process involves a handle wafer, a silicon layer, and a dielectric layer, with a focus on controlling the temperature of the reactor to ensure that the etching and deposition reactions are kinetically limited. He has 1 patent to his name.

Career Highlights

Dhumal is currently employed at MEMC Electronic Materials, Inc., where he continues to innovate in the field of semiconductor materials. His expertise in silicon processing has positioned him as a valuable asset in the industry.

Collaborations

Some of his notable coworkers include Thomas A Torack and John Allen Pitney. Their collaborative efforts contribute to the advancement of technology in their field.

Conclusion

Swapnil Y Dhumal's work in silicon-on-insulator technology exemplifies the innovative spirit of modern inventors. His contributions are paving the way for advancements in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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