Jhudong, Taiwan

Suz-Hua Ho

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignees: Sino-American Silicon Products Inc., Other. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Suz-Hua Ho. Retrieved from https://idiyas.com/inventor/suz-hua-ho

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Jhudong Township, Hsinchu County, TW (2011 - 2012)
  • Hsinchu, TW (2015)

Company Filing History:

goldMedal3 out of 33 
 
Sino-American Silicon Products Inc.
 patents
silverMedal2 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2011-2015

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3 patents (USPTO):Explore Patents

Title: The Innovative Mind of Suz-Hua Ho

Introduction: Suz-Hua Ho, an accomplished inventor based in Jhudong, Taiwan, has made significant contributions to the field of semiconductor technology. With a portfolio of three patents, his groundbreaking work showcases innovative methods and apparatuses that enhance the formation and fabrication of crystalline silicon and semiconductor substrates.

Latest Patents: Suz-Hua Ho is the inventor of several noteworthy patents that reflect his expertise in semiconductor technology. His latest patent, the "Crystalline Silicon Formation Apparatus," introduces a quick cooling method applied to the bottom of a crucible. This technique controls the growth orientation of polycrystalline silicon grains, ensuring that the crystal grain forms twin boundaries, characteristic of a symmetric grain boundary. The method promotes the upward growth of the crystal grain, minimizing defects or impurities within the polycrystalline silicon.

Another significant patent is the "Method of Fabricating Semiconductor Substrate by Use of Heterogeneous Substrate and Recycling Heterogeneous Substrate During Fabrication Thereof." This invention details a method for fabricating a first substrate while recycling a second heterogeneous substrate. The process involves preparing the second substrate, depositing a buffer layer, and subsequently adding a semiconductor material layer. The buffer layer aids in the epitaxial growth of the semiconductor while also acting as a lift-off layer, facilitating the separation of substrates during manufacturing.

Career Highlights: Throughout his career, Suz-Hua Ho has been associated with prominent companies, including Sino-American Silicon Products Inc. His work there has solidified his status as an innovator in the semiconductor field, contributing to the advancement of technologies essential for modern electronics.

Collaborations: Collaboration has been a vital aspect of Suz-Hua Ho’s journey as an inventor. He has worked alongside talented individuals, including Wen-Ching Hsu and Miin-Jang Chen, showcasing the spirit of teamwork in the pursuit of innovation.

Conclusion: Suz-Hua Ho's inventive spirit and significant contributions to semiconductor technologies emphasize the importance of innovation in modern science. His patents not only highlight his technical prowess but also pave the way for advancements that will benefit the semiconductor industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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