The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Dec. 14, 2009
Chung-wen Lan, Hsinchu, TW;
Kimsam Hsieh, Hsinchu, TW;
Wen-huai Yu, Hsinchu, TW;
Bruce Hsu, Hsinchu, TW;
Ya-lu Tsai, Hsinchu, TW;
Wen-ching Hsu, Hsinchu, TW;
Suz-hua Ho, Hsinchu, TW;
Chung-Wen Lan, Hsinchu, TW;
Kimsam Hsieh, Hsinchu, TW;
Wen-Huai Yu, Hsinchu, TW;
Bruce Hsu, Hsinchu, TW;
Ya-Lu Tsai, Hsinchu, TW;
Wen-Ching Hsu, Hsinchu, TW;
Suz-Hua Ho, Hsinchu, TW;
Sino-American Silicon Products, Inc., Hsinchu, TW;
Abstract
In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.