Chiba, Japan

Susumu Takahashi

This inventor holds 2 USPTO granted patents. Top assignee: Hitachi Cable, Inc.. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Susumu Takahashi. Retrieved from https://idiyas.com/inventor/susumu-takahashi-bc26ltjd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 19(Granted Patents)


Location History:

  • Abiko, JP (2002)
  • Chiba, JP (2004)

Company Filing History:


Years Active: 2002-2004

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2 patents (USPTO):Explore Patents

Title: Susumu Takahashi: Innovator in Crystalline Silicon Semiconductor Technology

Introduction

Susumu Takahashi is a prominent inventor based in Chiba, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of crystalline silicon devices. With a total of 2 patents, his work has paved the way for advancements in semiconductor fabrication processes.

Latest Patents

Takahashi's latest patents include innovative methods for fabricating crystalline silicon semiconductor devices. One of his notable inventions involves a process where concave and convex structures are formed on a substrate. An amorphous silicon layer is then created on a metallic catalyst, which is arranged in a dotted pattern within the concave areas. This method allows for the growth of crystal phases that integrate through heat treatment, resulting in a polycrystalline silicon layer that is both cost-effective and efficient for semiconductor applications.

Another significant patent details a process for producing crystalline silicon thin films. This method involves rendering part of a crystalline silicon semiconductor substrate porous, followed by the formation of a catalytic metal layer and an amorphous silicon thin film. The heating of this film monocrystallizes it, enhancing the quality of the resulting crystalline silicon thin film. This innovative approach allows for better control over dopant concentration and supports the miniaturization of semiconductor devices.

Career Highlights

Susumu Takahashi is currently employed at Hitachi Cable, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing processes that improve the efficiency and quality of silicon-based devices.

Collaborations

Throughout his career, Takahashi has collaborated with notable colleagues, including Shinichi Muramatsu and Fumihito Oka. These partnerships have fostered a collaborative environment that enhances innovation and research in semiconductor technology.

Conclusion

Susumu Takahashi's contributions to the field of crystalline silicon semiconductor technology are noteworthy. His innovative patents and collaborative efforts have significantly advanced the capabilities of semiconductor fabrication processes. His work continues to influence the industry and drive future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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