Sungwon Jun

Title: Innovations of Sungwon Jun in Memory Device Technology

Introduction

Sungwon Jun is a notable inventor based in San Jose, CA, who has made significant contributions to the field of memory device technology. With a total of 2 patents to his name, he has been instrumental in developing advanced methods for improving memory devices.

Latest Patents

Sungwon Jun's latest patents include innovative technologies such as "3D CTF integration using hybrid charge trap layer of SiN and self-aligned SiGe nanodot." This patent provides an improved memory device and a method of manufacturing the same. In one embodiment, the memory device may include a vertical stack of alternating oxide and nitride layers, with a channel region formed therethrough. A plurality of nanostructures is selectively formed on the nitride layer of the vertical stack, and a gate oxide layer encapsulates the exposed surfaces of the channel region. The nanostructures may consist of a group IV semiconductor compound, such as silicon germanium (SiGe).

Another significant patent is "Self-aligned nanodots for 3D NAND flash memory." This patent outlines a method of forming a 3D NAND structure with self-aligned nanodots. The process includes depositing alternating layers of oxide and nitride on a substrate, partially recessing the nitride layers, and forming SiGe nanodots on the nitride layers. The method involves maintaining a substrate temperature below about 560°C and flowing a silicon epitaxy precursor into the chamber to form a silicon epitaxial layer.

Career Highlights

Sungwon Jun is currently employed at Applied Materials, Inc., where he continues to push the boundaries of memory technology. His work has been pivotal in advancing the capabilities of NAND flash memory, which is essential for modern electronic devices.

Collaborations

Some of his notable coworkers include Thomas Jongwan Kwon and Saurabh Chopra, who have collaborated with him on various projects within the field of memory technology.

Conclusion

Sungwon Jun's innovative contributions to memory device technology, particularly through his patents, highlight his expertise and commitment to advancing the field. His work at Applied Materials, Inc. continues to influence the development of cutting-edge memory solutions.