This inventor holds 4 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2016-2024.
Company Filing History:
Years Active: 2016-2024
Title: Innovations of Sungkyu Jo in Memory Device Technology
Introduction
Sungkyu Jo is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of memory device technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and functionality of memory devices, which are crucial in modern electronics.
Latest Patents
One of his latest patents involves a memory device that includes a cell region with multiple word lines, bit lines, and memory cells. Each memory cell consists of a switch element and a memory element connected in series. The device features a control logic that inputs a pre-voltage to a selected memory cell before reading its data, optimizing the reading process based on the elapsed time after programming.
Another significant patent by Jo describes a memory device that incorporates an Ovonic threshold switch element. This device includes a cell area with various word lines, bit lines, and memory cells. The peripheral circuit area is designed to input a refresh voltage to execute a refresh operation, determining the state of refresh cells while managing the refresh voltages effectively.
Career Highlights
Sungkyu Jo is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to push the boundaries of memory device innovation, contributing to the company's reputation for cutting-edge technology.
Collaborations
Jo collaborates with fellow inventor Jinyub Lee, working together to advance their research and development efforts in memory technology. Their partnership exemplifies the collaborative spirit that drives innovation in the tech industry.
Conclusion
Sungkyu Jo's contributions to memory device technology reflect his expertise and dedication to innovation. His patents not only enhance the functionality of memory devices but also pave the way for future advancements in the field.