The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Jun. 06, 2017
Applicant:

Sungkyu JO, Hwaseong-si, KR;

Inventor:

Sungkyu Jo, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/003 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0023 (2013.01); G11C 13/0033 (2013.01); G11C 13/0061 (2013.01); G11C 13/0069 (2013.01); G11C 2013/0073 (2013.01);
Abstract

A memory device includes: a cell array connected to a plurality of word lines and bit lines, the cell array including a plurality of memory cells each including a variable resistance element and a bidirectional selection element; a selection circuit that selects a selected word line and a selected bit line; and control logic that controls the selection circuit such that in a stand-by state, wherein the word lines and the bit lines which are connected to memory cells of a first area of the cell array are maintained in a discharge state, and the word lines and bit lines which are connected to memory cells of a second area of the cell array are maintained in a precharge state.


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