Taichung, Taiwan

Sung-Ying Wen

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 7(Granted Patents)


Location History:

  • Changhua County, TW (2015)
  • Taichung, TW (2020)

Company Filing History:


Years Active: 2015-2020

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2 patents (USPTO):Explore Patents

Title: Innovations by Sung-Ying Wen

Introduction

Sung-Ying Wen is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of advanced memory technologies. With a total of 2 patents, his work has garnered attention in the industry.

Latest Patents

Sung-Ying Wen's latest patents include a method for manufacturing an electrode and resistive random access memory. The first patent describes a method for manufacturing an electrode that involves forming a conductive layer on a base material, followed by the deposition of a radio frequency physical vapor deposition (RF PVD) transition metal compound layer. A sacrificial layer is then formed, and a planarization process is performed to remove the sacrificial layer and a portion of the RF PVD transition metal compound layer. The second patent focuses on a resistive RAM that includes a first electrode, a second electrode, a transition metal oxide (TMO) layer between the electrodes, an activated metal layer, and a metal oxynitride layer formed in a gas environment containing oxygen and nitrogen elements.

Career Highlights

Sung-Ying Wen is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of resistive RAM, which is crucial for modern electronic devices.

Collaborations

Some of his notable coworkers include Shuo-Che Chang and Yi-Chung Chen. Their collaborative efforts contribute to the innovative environment at Winbond Electronics Corporation.

Conclusion

Sung-Ying Wen's contributions to the field of electronics through his patents and work at Winbond Electronics Corporation highlight his role as a key innovator in memory technology. His advancements are paving the way for future developments in the industry.

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