Company Filing History:
Years Active: 2003-2007
Title: Innovations of Sung-Ming Jang
Introduction
Sung-Ming Jang is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on improving processes and materials used in semiconductor manufacturing.
Latest Patents
One of his latest patents is titled "EBR shape of spin-on low-k material providing good film stacking." This invention presents a new method to tune the Edge Bead Remove hump, which helps prevent peeling of the low-k dielectric film after the Chemical Mechanical Polishing process. Another significant patent is the "Dual damascene aperture formation method absent intermediate etch stop layer." This method involves surface treating a first dielectric layer to create a surface treated layer with a different composition, followed by the formation of a second dielectric layer. The invention allows for the formation of a trench through the second dielectric layer, with an endpoint determined by detecting differences in composition.
Career Highlights
Sung-Ming Jang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative approaches have contributed to advancements in manufacturing techniques and material properties.
Collaborations
He has collaborated with notable colleagues, including Tsu Shih and Yu-Huei Chen, to further enhance the development of semiconductor technologies.
Conclusion
Sung-Ming Jang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to impact the field positively.