The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jul. 02, 2002
Tsu Shih, Hsin Chu, TW;
Sung-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
A method for forming a metal filled semiconductor feature including a low dielectric constant CMP polishing stop layer for improving a CMP polishing process including providing a semiconductor processing surface having a anisotropically etched semiconductor feature formed through a thickness including a second dielectric insulating layer overlying a first dielectric insulating layer, the second dielectric insulating layer having a CMP material removal rate in a CMP process less than about ½ of a CMP material removal rate of the first dielectric insulating layer in the CMP process; filling the anisotropically etched semiconductor feature with a metal to form a metal filled semiconductor feature; and, planarizing according to the CMP process excess material including the metal overlying the second dielectric insulating layer.