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Hsinchu, Taiwan

Sung-Min Wei

USPTO Granted Patents = 3

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 8(Granted Patents)

Location History:

Taichung, TW (2000)
Hsinchu, TW (2004)

Company Filing History:

Vanguard International Semiconductor Corporation

Years Active: 2000-2004

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3 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6835636 - Method for fabricating source/drain devices (2004-12-28),

2. 6713338 - Method for fabricating source/drain devices (2004-03-30),

3. 6046084 - Isotropic etching of a hemispherical grain silicon layer to improve the (2000-04-04),

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