Sun-Mo Hwang

Title: Sun-Mo Hwang: Innovator in Non-Volatile Memory Technology

Introduction

Sun-Mo Hwang is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of NAND flash memory technology.

Latest Patents

One of Hwang's latest patents is a non-volatile memory device that includes at least one NAND flash memory and a memory controller. This memory controller is designed to control the NAND flash memory effectively. It features a bit counter that counts the first binary digit of each readout page data, which is read using various test read voltages. Additionally, the device includes a register for storing count values and a read voltage adjuster that determines the optimal read voltage based on these counts.

Another significant patent is a method for regulating the reading voltage of a NAND flash memory device. This method involves reading data from paired pages, adjusting test read voltages, and performing bitwise operations on the data. The process counts memory cells corresponding to specific threshold voltage states and sets read voltages accordingly to optimize performance.

Career Highlights

Sun-Mo Hwang has worked with notable companies, including The Aio Inc. His experience in the industry has allowed him to develop innovative solutions that address challenges in memory technology.

Collaborations

Hwang has collaborated with Seung-Hyun Han, contributing to advancements in memory device technology.

Conclusion

Sun-Mo Hwang's contributions to non-volatile memory technology demonstrate his expertise and innovative spirit. His patents reflect a commitment to improving memory device performance, making him a notable figure in the field.