The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Jun. 27, 2014
Applicant:

The-aio Inc., Gyeonggi-do, KR;

Inventors:

Seung-Hyun Han, Seoul, KR;

Sun-Mo Hwang, Gyeonggi-do, KR;

Assignee:

The-AiO Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

A method of adjusting read voltages for a NAND flash memory device includes an operation of reading first page data from a first page corresponding to a paired page of a second page, an operation of simultaneously changing the first test read voltage and the third test read voltage to read second page data from a second page, an operation of performing a bitwise operation on the first page data and the second page data an operation of counting a number of memory cells corresponding to a first threshold voltage state and a fourth threshold voltage state by using a result of the bitwise operation, and an operation of setting a first read voltage and a third read voltage as a voltage corresponding to a section in which a change in the number of memory cells is a lowest value.


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