Suman Dasgupta

Title: Suman Dasgupta - Innovator in Integrated Circuit Technology

Introduction

Suman Dasgupta is an inventor based in Beaverton, OR (US). He has made significant contributions to the field of integrated circuits, particularly in the design of gate-all-around (GAA) structures. His innovative approach focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patent Applications

Suman Dasgupta's notable patent application is titled "SOURCE AND DRAIN REGIONS FOR LATERALLY ADJACENT GATE-ALL-AROUND (GAA) PMOS AND NMOS." This application describes an integrated circuit that includes laterally adjacent first and second devices. The first device features a first source or drain region, a first gate structure, and a first inner spacer positioned between the first source or drain region and the first gate structure. Similarly, the second device comprises a second source or drain region, a second gate structure, and a second inner spacer between the second source or drain region and the second gate structure. Notably, the first source or drain region has a width that is at least 1 nanometer different from the width of the second source or drain region. Additionally, the first inner spacer has a width that is at least 1 nanometer different from the width of the second inner spacer. These various widths are measured in the direction of a semiconductor body between the first source or drain region and the first gate structure.

Conclusion

Suman Dasgupta is an innovative inventor whose work in integrated circuit technology showcases his commitment to advancing semiconductor design. His contributions, particularly in the area of gate-all-around structures, highlight the importance of precision in modern electronics.