Osaka, Japan

Sugao Fujinaga

This inventor holds 5 USPTO granted patents. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1995-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sugao Fujinaga. Retrieved from https://idiyas.com/inventor/sugao-fujinaga

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Hirakata, JP (1995)
  • Osaka, JP (1998 - 1999)
  • Kyoto, JP (2005)

Company Filing History:


Years Active: 1995-2005

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5 patents (USPTO):Explore Patents

Title: **Sugao Fujinaga: Pioneer in Semiconductor Innovation**

Introduction

Sugao Fujinaga is a distinguished inventor based in Osaka, Japan, known for his contributions to the field of semiconductor technology. With a total of five patents to his name, Fujinaga has made significant strides in enhancing the performance and reliability of semiconductor devices.

Latest Patents

Fujinaga's most recent patents include an innovative **evaluation device for evaluating semiconductor devices**. This device is designed specifically to assess the electric characteristics of an electrical connection member positioned vertically relative to a substrate surface. The invention incorporates a unit circuit featuring a switching transistor. This transistor has its gate connected to a signal line, while one of its source or drain terminals connects to a first interconnect. Additionally, a first resistance element is integrated into the circuit, enhancing the operational efficiency of the semiconductor device under evaluation.

Another notable patent is for a **semiconductor device with a particular DMOSFET structure**. This invention details a method for forming a P-type body diffused layer within an N-type drain diffused layer of a DMOSFET. The process includes implanting P-type impurity ions at a high tilt angle to ensure they reach the region beneath the N+ gate electrode. By utilizing a resist film as a mask, the design minimizes the need for a high-temperature drive-in process, thereby preventing complications such as threshold voltage variations and degradation of the gate oxide film. This advancement ensures a semiconductor device with reduced on-resistance and improved stability.

Career Highlights

Sugao Fujinaga is currently employed at Matsushita Electric Industrial Co., Ltd., a leader in electronic product innovation. Throughout his career, Fujinaga has remained dedicated to pushing the boundaries of semiconductor technology, continually seeking to develop more effective and reliable components for modern electronics.

Collaborations

Fujinaga has had the opportunity to work alongside talented colleagues, including Taizo Fujii and Takehiro Hirai. Their collaborative efforts have furthered the research and development in semiconductor technology, contributing to the advancement of the industry.

Conclusion

With his impressive array of patents and innovative contributions to semiconductor technology, Sugao Fujinaga stands as a pivotal figure in the field. His dedication to research and development continues to pave the way for future innovations in electronics, solidifying his status as a leading inventor in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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