The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Apr. 08, 1996
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An n-type buried layer and an n-type epitaxial layer that becomes a collector layer of a pnp transistor are formed on a semiconductor substrate. A well and the collector layer are formed. Ions of an n-type impurity are implanted through a photoresist mask, to form an intrinsic base layer of the pnp transistor and a PT-VT diffusion layer with punchthrough stopper and threshold control functions of a pMOSFET. Ions of a p-type impurity are implanted through a photoresist mask at a shallow implantation depth than the previous step, to form an intrinsic base layer of an npn transistor and a channel dope layer of the pMOSFET. A buried channel is formed under the gate of the pMOSFET. Therefore pMOSFETs with good characteristics can be obtained. In this way, the present invention achieves bipolar transistors and MOSFETs with good characteristics, without having to increase the number of fabrication steps and the number of photoresist masks.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile