This inventor holds 4 USPTO granted patents and 1 published patent application. Top assignees: Samsung Electronics Co., Ltd., Samsung Electronics Ltd.. Active years: 2025-2026.
Company Filing History:

Years Active: 2025-2026
Title: Innovations of Suchang Jeon in Nonvolatile Memory Technology
Introduction
Suchang Jeon is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices. His innovative work has led to the development of advanced memory systems that enhance data storage capabilities.
Latest Patents
Suchang Jeon holds a patent for a nonvolatile memory device. This device includes a memory cell array designed to store original setting data. It features a page buffer circuit connected to the memory cell array through multiple bit-lines. Additionally, the device incorporates a secure buffer and a control circuit. The secure buffer contains an access control circuit and several registers with restricted access. These registers store original setting data that is transferred from the memory cell array through the page buffer circuit during an initialization sequence. The control circuit is responsible for managing the page buffer circuit and the secure buffer. The registers consist of a first register and multiple second registers. The access control circuit allows for concurrent access to the second registers when the first register is accessed.
Career Highlights
Suchang Jeon is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has positioned him as a key player in the development of innovative memory solutions.
Collaborations
He collaborates with talented coworkers, including Hanjun Lee and Suyong Kim. Their combined expertise contributes to the advancement of memory technology at Samsung.
Conclusion
Suchang Jeon's contributions to nonvolatile memory technology exemplify his innovative spirit and dedication to advancing the field. His patent reflects a significant step forward in memory device design, showcasing the potential for improved data storage solutions.