Memory devices that support selective setting data update and methods of operating same

Abstract

A memory device includes a memory cell array having a plurality of cell blocks therein, including at least one cell block configured to store information data read (IDR) data related to setting an operating environment of the memory device. A setting data storage circuit is provided, which includes a plurality of storage regions in which the IDR data, which is read from the at least one cell block, is stored and a reset operation is independently controlled. Control logic is provided, which is configured to control at least one of a reset operation on the setting data storage circuit, and an IDR operation of updating the IDR data to the setting data storage circuit according to a decoding result of an external command. The control logic is configured to selectively reset only some storage regions of the setting data storage circuit in response to a determination that the external command is a first reset command, but reset all storage regions of the setting data storage circuit in response to a determination that the external command is a second reset command.