Su-Hua Tsai

Title: Innovations of Su-Hua Tsai

Introduction

Su-Hua Tsai is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on high-voltage devices, which are essential for various electronic applications.

Latest Patents

Su-Hua Tsai holds a patent for a high-voltage device and method for fabricating the same. This innovative device includes a semiconductor substrate, a source diffusion region, a drain diffusion region, a channel diffusion region, and a gate electrode. The design features a source diffusion region and a drain diffusion region with a first conductive type, both situated within the semiconductor substrate. The channel diffusion region is strategically placed between the source and drain diffusion regions. Additionally, the gate dielectric layer is positioned on the channel diffusion region, incorporating a first modified portion with a second conductive type that extends inwards from the edge of the gate dielectric layer. The gate electrode is placed on the gate dielectric layer, ensuring that the first modified portion, the gate electrode, and the channel diffusion region overlap at least partially.

Career Highlights

Su-Hua Tsai is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to contribute to advancements in high-voltage device technology.

Collaborations

Throughout his career, Su-Hua has collaborated with talented individuals such as Chih-Mou Lin and Chin-Chia Kuo. These collaborations have fostered innovation and development in their respective fields.

Conclusion

Su-Hua Tsai's contributions to high-voltage device technology exemplify the importance of innovation in the semiconductor industry. His patent and collaborations highlight his commitment to advancing technology and improving electronic devices.