Sunnyvale, CA, United States of America

Stuart Brinkley

USPTO Granted Patents = 2 

Average Co-Inventor Count = 7.5

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):

Title: Innovations by Inventor Stuart Brinkley

Introduction

Stuart Brinkley, an accomplished inventor based in Sunnyvale, CA, has made significant contributions to the field of materials science. With a total of two patents to his name, his work primarily focuses on innovative techniques for growing crystalline films that have applications in electronics and optoelectronics.

Latest Patents

Brinkley's latest patents include a groundbreaking method to grow in-situ crystalline IGZO (Indium Gallium Zinc Oxide) using co-sputtering targets. This technique utilizes a co-sputter approach to deposit IGZO films, employing a combination of oxygen and argon atmospheres. Remarkably, the films can achieve a c-axis aligned crystalline (CAAC) phase directly in an as-deposited state without requiring subsequent annealing treatments. His other notable patent describes a method for forming crystalline IGZO through annealing, wherein an IGZO layer is created on a substrate and then annealed in a nitrogen gas environment.

Career Highlights

Throughout his career, Stuart Brinkley has been associated with prominent companies such as Intermolecular, Inc. and LG Display Co., Ltd. His expertise in materials growth techniques has led to advancements in the production of oxides used in various electronic applications, underscoring his role as a key player in the industry.

Collaborations

Brinkley has collaborated with notable colleagues such as Sang M. Lee and Seon-Mee Cho. Their collective efforts have fostered innovative projects that contribute to the evolution of thin-film technologies and materials.

Conclusion

Stuart Brinkley continues to pave the way for new innovations in materials science with his patents and collaborations. His contributions not only enhance the understanding of crystalline structures but also facilitate advancements in the development of new electronic materials.

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