Intermolecular, Inc.

Lg Display Co., Ltd.

Stuart Brinkley

Seon-Mee Cho

Sang M Lee

Karl Anthony Littau

Minh Le

Min-Cheol Kim

Anh Duong

Woosup Shin

Jingang Su

Kwon-Sik Park

Yoon-Kyung Chang

Majid Gharghi

A co-sputter technique is used to deposit In&#x2014;Ga&#x2014;Zn&#x2014;O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Method to grow in-situ crystalline IGZO using co-sputtering targets

Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Methods for forming crystalline IGZO through annealing

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Sunnyvale, CA, United States of America

Stuart Brinkley