The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Nov. 20, 2014
Intermolecular Inc., San Jose, CA (US);
Seon-Mee Cho, Santa Clara, CA (US);
Stuart Brinkley, Sunnyvale, CA (US);
Anh Duong, Fremont, CA (US);
Majid Gharghi, San Jose, CA (US);
Sang Lee, San Jose, CA (US);
Minh Huu Le, San Jose, CA (US);
Karl Littau, Palo Alto, CA (US);
Jingang Su, Cupertino, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.