Steven T Harshfield

Title: Innovations by Steven T. Harshfield in Memory Device Technology

Introduction

Steven T. Harshfield, based in Emmett, Idaho, is a prolific inventor with a remarkable portfolio that includes 37 patents. His contributions primarily focus on advancements in memory device technology, and he is recognized within the field for his innovative approaches to contact structures.

Latest Patents

Among his latest innovations is a patent that details contact structures in memory devices. This patent describes annular, linear, and point contact structures that significantly reduce susceptibility to process deviations caused by lithographic and deposition variations, outperforming conventional circular contact plugs. In various embodiments, standard conductive materials such as carbon or titanium nitride are utilized to form these contacts, with alternative embodiments using memory materials themselves. The contact structures can be fabricated through a variety of processes, including chemical mechanical planarization and facet etching.

Career Highlights

Steven's career includes noteworthy positions at renowned companies such as Micron Technology Incorporated and Round Rock Research, LLC. His work at these institutions has further cemented his reputation as a key player in the development of cutting-edge memory technologies.

Collaborations

Throughout his career, Steven has collaborated with prominent individuals in the industry, including David Q. Wright and Nanseng Jeng. These collaborations have contributed to enhancing his innovative projects and expanding the potential applications of his inventions.

Conclusion

In summary, Steven T. Harshfield stands out as a significant innovator in the realm of memory device technology. His extensive patent portfolio and collaborative efforts underline his commitment to advancing the field, making him a noteworthy figure for anyone interested in innovations in technology.