Steven M Cea

Title: Innovations by Steven M Cea

Introduction

Steven M Cea is an accomplished inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of field-effect transistors. With a total of 2 patents to his name, Cea's work has had a notable impact on enhancing electronic device performance.

Latest Patents

Cea's latest patents focus on the use of epitaxial silicon germanium to reduce contact resistance in field-effect transistors. One of his key innovations describes a method for selectively relieving channel stress for n-channel transistors with recessed, epitaxial SiGe source and drain regions. This method increases electron mobility for n-channel transistors without affecting the strain in p-channel transistors. The incorporation of SiGe provides lower resistance when a silicide is formed, which is crucial for improving the efficiency of these transistors.

Career Highlights

Steven M Cea is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His work at Intel has allowed him to be at the forefront of technological advancements in the industry. Cea's expertise in semiconductor materials and device engineering has positioned him as a valuable asset to his team.

Collaborations

Cea has collaborated with notable colleagues such as Justin K Brask and Lucian Shifren. These collaborations have fostered an environment of innovation and have contributed to the successful development of new technologies in the semiconductor field.

Conclusion

In summary, Steven M Cea is a prominent inventor whose work in semiconductor technology has led to significant advancements in field-effect transistors. His contributions continue to influence the industry and enhance electronic device performance.