Steven Jack Keltner

Title: The Innovations of Steven Jack Keltner

Introduction

Steven Jack Keltner is a notable inventor based in O'Fallon, MO (US). He has made significant contributions to the field of silicon crystal growing processes. With a total of 4 patents to his name, Keltner's work focuses on enhancing the quality and purity of silicon used in various applications.

Latest Patents

Keltner's latest patents include innovative processes for doping molten silicon. One of his patents, titled "Barium doping of molten silicon for use in crystal growing process," describes a method for preparing doped molten silicon. In this process, polysilicon is doped with barium and melted in a silica crucible. The barium acts as a devitrification promoter, creating a layer of devitrified silica on the crucible's surface, which results in lower contaminant levels in the melt and the grown crystal. Another significant patent is "Strontium doping of molten silicon for use in crystal growing process." This patent outlines a similar process where polysilicon is doped with strontium, which also serves as a devitrification promoter, enhancing the purity of the silicon crystal.

Career Highlights

Keltner is currently employed at Memc Electronic Materials, Inc., where he continues to develop innovative solutions in silicon processing. His expertise in doping techniques has positioned him as a key player in the advancement of crystal growing technologies.

Collaborations

Throughout his career, Keltner has collaborated with notable colleagues, including Richard Joseph Phillips and John D Holder. These partnerships have contributed to the successful development of his patented processes.

Conclusion

Steven Jack Keltner's contributions to the field of silicon crystal growing are noteworthy. His innovative approaches to doping molten silicon have the potential to significantly improve the quality of silicon crystals used in various industries. Keltner's work exemplifies the impact of dedicated inventors in advancing technology.