Memc Electronic Materials, Inc.

Steven Jack Keltner

Richard Joseph Phillips

John D Holder

A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the barium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.

Barium doping of molten silicon for use in crystal growing process

A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.

Strontium doping of molten silicon for use in crystal growing process

A process for preparing a quartz crucible having a tungsten doped layer on the inside surface, outside surface, or both the inside surface and the outside surface is disclosed. One or more surfaces of the crucible is exposed to a vaporous tungsten source to anneal the tungsten into the crucible surface and create a tungsten doped layer which behaves similarly to a bubble free layer upon use in a crystal pulling process.

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O'Fallon, MO, United States of America

Steven Jack Keltner