Osaka, Japan

Steven Droes

This inventor holds 1 USPTO granted patent. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Steven Droes. Retrieved from https://idiyas.com/inventor/steven-droes

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Steven Droes: Innovator in Semiconductor Technology

Introduction

Steven Droes is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device and its manufacturing method.

Latest Patents

Steven Droes holds a patent for a semiconductor device and its manufacturing method. This patent describes a device portion forming step that includes an assisting layer forming step. The process involves creating a planarization assisting layer that covers multiple conductive films over a first planarizing layer before forming a second planarizing layer. The planarization assisting layer is designed to ensure that the height from the surface of the first planarizing layer is equal in regions with and without conductive films.

Career Highlights

Steven Droes is associated with Sharp Kabushiki Kaisha Corporation, where he has been instrumental in advancing semiconductor technologies. His work has been recognized for its potential to enhance the efficiency and performance of semiconductor devices.

Collaborations

Some of his notable coworkers include Yasumori Fukushima and Yutaka Takafuji. Their collaborative efforts have contributed to the innovative projects at Sharp Kabushiki Kaisha Corporation.

Conclusion

Steven Droes is a key figure in semiconductor innovation, with a focus on improving manufacturing methods. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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