Steve Kramer

Title: Steve Kramer: Innovating the Future of Magnetic Memory Technology

Introduction: Steve Kramer, a prominent inventor based in Boise, ID, has made significant contributions to the field of memory technology with an impressive portfolio of 20 patents. His innovations focus primarily on magnetic memory cell structures, showcasing his expertise and visionary approach in developing advanced technologies.

Latest Patents: Among his latest innovations is the STT-MRAM cell structure incorporating piezoelectric stress material. This patent describes a magnetic memory cell that includes piezoelectric material, with associated methods of operating this memory cell. Notably, the memory cell features a stack configuration, where the piezoelectric material can either be integrated as a layer within the stack or placed adjacent to it. This innovative use of piezoelectric material aims to induce transient stress during the programming of the memory cell, ultimately reducing the critical switching current required for efficient operation.

Career Highlights: Throughout his career, Steve has worked with notable organizations like Micron Technology Incorporated and Idaho Research Foundation, Inc. His work in these companies highlights his commitment to advancing memory technologies and enhancing their practical applications in various electronic devices.

Collaborations: Steve has had the opportunity to collaborate with leading professionals in his field, including Gurtej S. Sandhu and Chien M. Wai. These collaborations have fostered an environment of innovation and have contributed to the success of his projects and patents.

Conclusion: Steve Kramer's innovative contributions to magnetic memory technology, particularly with his latest patented inventions, exemplify his role as a leading inventor in the industry. His dedication to research and development continues to pave the way for advancements in memory technologies that can transform the digital landscape.