Steve Koester

Title: Steve Koester: Innovator in CMOS Technology

Introduction

Steve Koester is a prominent inventor based in Minneapolis, MN (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of methodologies for fabricating advanced CMOS devices. With a total of 4 patents to his name, Koester's work has had a substantial impact on the performance of electronic devices.

Latest Patents

One of Koester's latest patents is titled "Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors." This innovative method focuses on the fabrication of recessed source and drain regions in aggressively scaled CMOS devices. The process involves a sequence of plasma etch, deposition, and plasma etch to form recessed regions in the channel of thin body devices, which are less than 40 nm in size. This technique enables the subsequent epitaxial growth of materials such as SiGe and SiC, leading to enhanced device and ring oscillator performance. The patent also describes a Field Effect Transistor device that includes a buried oxide layer, a silicon layer, isotropically recessed source and drain regions, and a gate stack comprising a gate dielectric, conductive material, and spacer.

Career Highlights

Steve Koester is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of semiconductor technology. His work at IBM has allowed him to collaborate with some of the brightest minds in the industry, contributing to the advancement of CMOS technology.

Collaborations

Some of Koester's notable coworkers include Nicholas C Fuller and Isaac Lauer. Their collaborative efforts have further enhanced the innovative projects within the realm of semiconductor research and development.

Conclusion

Steve Koester's contributions to the field of CMOS technology exemplify the spirit of innovation and dedication to advancing electronic device performance. His patents and work at IBM continue to influence the future of semiconductor technology.