International Business Machines Corporation

Steve Koester

Ying Di Zhang

Isaac Lauer

Nicholas C Fuller

Devendra K Sadana

Daniel Michael Kuchta

Sandip Tiwari

Dennis L Rogers

John D Crow

A method for fabricating recessed source and recessed drain regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the source and the drain in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed source region; an isotropically recessed drain region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.

Methodology for fabricating isotropically recessed source and drain regions of CMOS transistors

A method for fabricating recessed drain regions of aggressively scaled CMOS devices. In this method a processing sequence of plasma etch, deposition, followed by plasma etch is used to controllably form recessed regions of the drain in the channel of a thin body, much less than 40 nm, device to enable subsequent epitaxial growth of SiGe, SiC, or other materials, and a consequent increase in the device and ring oscillator performance. A Field Effect Transistor device is also provided, which includes: a buried oxide layer; a silicon layer above the buried oxide layer; an isotropically recessed drain region; and a gate stack which includes a gate dielectric, a conductive material, and a spacer.

Methodology for fabricating isotropically recessed drain regions of CMOS transistors

A monolithic semiconductor optical detector is formed on a substrate having a plurality of substantially parallel trenches etched therein. The trenches are further formed as a plurality of alternating N-type and P-type trench regions separated by pillar regions of the substrate which operate as an I region between the N and P trench regions. First and second contacts are formed on the surface of the substrate and interconnect the N-type trench regions and the P-type trench regions, respectively. Preferably, the trenches are etched with a depth comparable to an optical extinction length of optical radiation to which the detector is responsive.

Lateral trench optical detectors

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Minneapolis, MN, United States of America

Steve Koester