The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2001

Filed:

Dec. 04, 1998
Applicant:
Inventors:

John Crow, Mt. Kisco, NY (US);

Steve Koester, Ossining, NY (US);

Daniel M. Kuchta, Patterson, NY (US);

Dennis L. Rogers, Croton on Hudson, NY (US);

Devendra Sadana, Pleasantville, NY (US);

Sandip Tiwari, Ossining, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/166 ; H01L 2/18242 ; H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/166 ; H01L 2/18242 ; H01L 2/120 ;
Abstract

A monolithic semiconductor optical detector is formed on a substrate having a plurality of substantially parallel trenches etched therein. The trenches are further formed as a plurality of alternating N-type and P-type trench regions separated by pillar regions of the substrate which operate as an I region between the N and P trench regions. First and second contacts are formed on the surface of the substrate and interconnect the N-type trench regions and the P-type trench regions, respectively. Preferably, the trenches are etched with a depth comparable to an optical extinction length of optical radiation to which the detector is responsive.


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