Plano, TX, United States of America

Steve Hsia


Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 19(Granted Patents)


Location History:

  • San Jose, CA (US) (1999)
  • Plano, TX (US) (2003)

Company Filing History:


Years Active: 1999-2003

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Innovations of Steve Hsia

Introduction

Steve Hsia is a notable inventor based in Plano, TX (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to fabrication processes.

Latest Patents

One of his latest patents is titled "Self-aligned stack formation." This method simplifies the polycide gate structure fabrication processes by using a hardmask to define a pattern of siliciding a silicon layer. The process involves using the silicide to mask the removal of unreacted silicon and in locations where the hardmask had been present. The metal silicide formed in the exposed silicon regions functions as a self-aligned mask against the silicon and etching. By employing a selective etching process between the silicon and the silicide, the silicon can be etched down to the gate oxide to form the polycide (silicide/polysilicon) gate. This method is particularly advantageous in DRAM applications but can also be utilized as a MOS gate in a transistor.

Another significant patent is the "Low defect density composite dielectric." This invention features a composite dielectric layer where the first layer has a small to no nitrogen concentration, while the second layer has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer may be used as a thin gate dielectric, with the second layer located adjacent to a doped gate electrode. The nitrogen concentration in the second layer is sufficient to stop the penetration of dopant from the gate electrode to the channel region. The first layer is strategically placed between the second layer and the channel region, ensuring that its low nitrogen concentration does not interfere with carrier mobility.

Career Highlights

Steve Hsia is currently employed at Texas Instruments Corporation, where he continues to innovate and contribute to advancements in semiconductor technology. His work has had a lasting impact on the industry, particularly in the development of efficient fabrication methods.

Collaborations

Steve has collaborated with notable colleagues such as Douglas Ticknor Grider and Paul Edward Nicollian. Their combined expertise has furthered the development of innovative technologies in their field.

Conclusion

Steve Hsia's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as a significant inventor in the industry. His innovative methods continue to influence the future of semiconductor fabrication.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…