The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1999
Filed:
Nov. 19, 1997
Douglas Ticknor Grider, III, McKinney, TX (US);
Paul Edward Nicollian, Dallas, TX (US);
Steve Hsia, San Jose, CA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A composite dielectric layer (102). A first layer (112) of the composite dielectric layer (102) has a small to no nitrogen concentration. A second layer (114) of the composite dielectric layer (102) has a larger nitrogen concentration (e.g., 5-15%). The composite dielectric layer (102) may be used as a thin gate dielectric wherein the second layer (114) is located adjacent a doped gate electrode (110) and has sufficient nitrogen concentration to stop penetration of dopant from the gate electrode (110) to the channel region (108). The first layer (112) is located between the second layer (114) and the channel region (108). The low nitrogen concentration of the first layer (112) is limited so as to not interfere with carrier mobility in the channel region (108).