The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 2003
Filed:
Jun. 03, 1998
Steve Hsia, Plano, TX (US);
Yin Hu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method to simplify the polycide gate structure fabrication processes by using a hardmask to define a pattern of siliciding a silicon layer and then using the silicide to mask removal of the unreacted silicon and in locations where the hardmask had been present. The metal silicide formed in the exposed silicon regions and functions as a self-aligned mask against the silicon and etching. By using a selective etching process between the silicon and and the silicide , the silicon and can be etched down to the gate oxide to form the polycide (silicide/polysilicon) gate. The polycide gate formed by this method is particularly advantageous in DRAM applications, but can also be used as a MOS gate in a transistor.