Summit, NJ, United States of America

Stephen J Pearton

This inventor holds 5 USPTO granted patents. Top assignees: At&t Bell Laboratories, American Telephone & Telegraph Co., At&t Bell Laboratories, At+t Corp.. Active years: 1988-1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stephen J Pearton. Retrieved from https://idiyas.com/inventor/stephen-j-pearton

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 3

Forward Citations = 60(Granted Patents)


Company Filing History:


Years Active: 1988-1995

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5 patents (USPTO):Explore Patents

Title: The Innovations of Stephen J. Pearton

Introduction

Stephen J. Pearton, an accomplished inventor based in Summit, NJ, has contributed significantly to the field of materials science and semiconductor technology. With a total of five patents to his name, Pearton has made innovative strides in the method of growing aluminum and gallium-containing layers, impacting various manufacturing processes.

Latest Patents

Pearton's recent innovations include two pivotal patents that focus on methods for selectively growing aluminum and gallium-containing layers:

1. **Method for Selectively Growing Aluminum-Containing Layers** - This invention involves the use of molecular beam processes wherein phenylarsine (PhAs) serves as an arsenic precursor. Due to its unique reactivity, PhAs selectively decomposes on III-V surfaces while avoiding unwanted growth on typical masking materials. This method allows for selective growth on unmasked gallium arsenide surfaces, optimizing production efficiency.

2. **Method for Selectively Growing Gallium-Containing Layers** - Pearton's second patent utilizes a compound from the dialkylaminoarsenic family (DAAAs), such as tris-dimethylamino arsenic (DMAAs), as an arsenic source. This innovative approach acts as a carbon 'getter,' effectively removing carbon impurities from the gallium source and enabling the selective growth of high purity or n-type layers of gallium arsenide at temperatures below 600°C. Additionally, DMAAs has proven to be an effective cleaning agent for gallium arsenide materials, enhancing overall quality.

Career Highlights

Throughout his career, Stephen J. Pearton has been associated with prestigious organizations such as AT&T Bell Laboratories and American Telephone & Telegraph Co. His experience in these leading institutions has allowed him to contribute to significant advancements in semiconductor technologies and research.

Collaborations

Pearton has collaborated with notable colleagues in his field, including Fan Ren and Thomas R. Fullowan. These collaborations have contributed to the development and refinement of his innovative technologies, as well as promoting knowledge exchange within the research community.

Conclusion

Stephen J. Pearton's work exemplifies the essence of innovation within the semiconductor industry. His latest patents underscore the importance of selecting appropriate materials and methods to enhance manufacturing processes. With a strong foundation in research and collaboration, Pearton continues to inspire future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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