The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 1993
Filed:
Nov. 27, 1991
Cammy R Abernathy, Scotch Plains, NJ (US);
Stephen J Pearton, Summit, NJ (US);
Fan Ren, Warren, NJ (US);
Patrick W Wisk, Greenbrook, NJ (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
In accordance with the invention, gallium-containing layers are grown by molecular beam processes using as an arsenic precursor a compound of the dialkylaminoarsenic family (DAAAs) such as tris-dimethylamino arsenic (DMAAs). In contrast to conventional arsenic sources, DAAAs act as carbon 'getters'. When DAAAs are used as an arsenic source, the DAAAs getter carbon impurities from the gallium source. Thus, for example, DAAAs can be used as an arsenic source in combination with TMG as a gallium source to selectively grow high purity or n-type layers of gallium arsenide at low temperatures below 600.degree. C. In addition DMAAs has been found to be an excellent cleaning agent for gallium arsenide materials.