The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
Oct. 07, 1993
Applicant:
Inventors:
Cammy R Abernathy, Scotch Plains, NJ (US);
Stephen J Pearton, Summit, NJ (US);
Fan Ren, Warren, NJ (US);
Patrick W Wisk, Greenbrook, NJ (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 89 ; 117104 ; 117 90 ; 117 95 ; 117954 ;
Abstract
In accordance with the invention, aluminum-containing layers are grown by molecular beam processes using as an arsenic precursor phenylarsine (PhAs). Because PhAs is more reactive than arsine and less reactive than arsenic, it decomposes selectively on III-V surfaces but not on mask materials. Thus in contrast to conventional processes, growth using PhAs permits selective growth on unmasked gallium arsenide surfaces but inhibits growth on typical mask materials such as silicon nitride.