Munich, Germany

Stephan Heinrich

This inventor holds 1 USPTO granted patent. Top assignee: Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stephan Heinrich. Retrieved from https://idiyas.com/inventor/stephan-heinrich-gj7fcjk9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Stephan Heinrich and His Patent in Charged Particle Beam Technology.

Introduction

Stephan Heinrich is an inventor associated with Munich, Germany, and Ict Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH. His patent work concerns charged particle beam equipment used to inspect or image samples.

Latest Patents

The provided information lists one patent for Heinrich: “Proximity-electrode, charged particle beam device and method for inspecting and/or imaging a sample.” The invention describes a proximity electrode with an aperture and multiple protrusions that extend radially into it. The aperture and protrusions have n-fold rotational symmetry, where n is an integer. The patent presents a structural design for use in charged particle beam devices. Heinrich is credited with 1 patent.

Career Highlights

Heinrich’s listed patent connects his work with semiconductor testing and charged particle beam technology. His association with Ict Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH places the invention in the context of specialized equipment for inspecting and imaging samples.

Collaborations

The available information identifies Ict Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH as Heinrich’s company affiliation. It does not specify additional collaborators or co-inventors.

Conclusion

Stephan Heinrich’s listed patent focuses on a rotationally symmetric proximity-electrode design for charged particle beam inspection and imaging, reflecting his connection to semiconductor testing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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