Sunnyvale, CA, United States of America

Stefan Wuensche

This inventor holds 2 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2006.


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 101(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2006)
  • S. Burlington, VT (US) (2006)

Company Filing History:


Years Active: 2006

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2 patents (USPTO):Explore Patents

Title: The Innovations of Stefan Wuensche

Introduction

Stefan Wuensche is a notable inventor based in Sunnyvale, CA. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of memory technology.

Latest Patents

One of Stefan's latest patents is a memory device with a column select that is variably delayed. This innovative memory device includes an array of memory cells arranged in rows and columns. Each memory cell is designed with a pass transistor coupled to a storage capacitor. The device features a row decoder connected to the rows of memory cells and a column decoder linked to the columns. The column decoder includes an enable input, while a variable delay has an output connected to this enable input. The variable delay receives an indication of whether the current cycle is a read or write cycle. In the preferred embodiment, the signal output from the variable delay is delayed during a read cycle compared to a write cycle.

Career Highlights

Stefan Wuensche is currently employed at Infineon Technologies AG, where he continues to develop innovative memory solutions. His expertise in memory technology has positioned him as a key player in the industry.

Collaborations

Stefan has collaborated with several talented individuals, including Mike A Killian and Harald Streif. These collaborations have contributed to the advancement of memory device technology.

Conclusion

Stefan Wuensche's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to shape the future of memory devices.

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