Sreevatsa Sreekantham

Title: Innovations in Power MOSFET Applications by Sreevatsa Sreekantham

Introduction

Sreevatsa Sreekantham is an accomplished inventor based in Chandler, Arizona, recognized for his significant contributions to the field of semiconductor technology. With a total of two patents to his name, he has made notable advancements in the design and manufacture of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which are crucial components in various electronic devices.

Latest Patents

Sreevatsa's latest patents reflect his innovative approach to enhancing the efficiency of power MOSFET applications. One of his notable inventions is a method for forming a low resistance gate for power MOSFET applications. This method involves forming a trench in a semiconductor region, followed by lining the sidewalls and bottom surface of the trench with a dielectric layer. A first polysilicon layer is then formed on the trench's bottom surface, succeeded by a conductive material layer atop the polysilicon. The process culminates with rapid thermal processing that facilitates a reaction among these layers.

Additionally, his patent titled "Low Resistance Gate for Power MOSFET Applications and Method of Manufacture" details the formation of a trench gate field effect transistor. The steps include crafting a trench in a semiconductor region, applying a dielectric layer, and managing a conductive seed layer in the trench’s bottom portion. A low resistance material is selectively grown over this seed layer, providing substantial improvements in performance.

Career Highlights

Sreevatsa Sreekantham is currently associated with Fairchild Semiconductor Corporation, a recognized leader in the semiconductor industry. His work at Fairchild has significantly contributed to enhancing the efficiency and performance of semiconductor devices.

Collaborations

During his innovative journey, Sreevatsa has collaborated with esteemed colleagues such as Ihsiu Ho and Fred Session. These collaborations have fostered a productive environment for exploring new technologies within the semiconductor domain.

Conclusion

Sreevatsa Sreekantham’s contributions to power MOSFET technology through his innovative patents underscore his role as a notable inventor in the semiconductor field. His advancements not only enhance the functionality of electronic devices but also represent significant strides in semiconductor manufacturing practices.