The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Sep. 27, 2010
Sreevatsa Sreekantham, Chandler, AZ (US);
Ihsiu Ho, Salt Lake City, UT (US);
Fred Session, Sandy, UT (US);
James Kent Naylor, Kaysville, UT (US);
Sreevatsa Sreekantham, Chandler, AZ (US);
Ihsiu Ho, Salt Lake City, UT (US);
Fred Session, Sandy, UT (US);
James Kent Naylor, Kaysville, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method for forming a trench gate field effect transistor includes forming, in a semiconductor region, a trench followed by forming a dielectric layer lining a sidewall and a bottom surface of the trench. The method also includes, forming a first polysilicon layer on the bottom surface of the trench. The method further includes, forming a conductive material layer on an exposed surface of the first polysilicon layer and forming a second polysilicon layer on an exposed surface of the conductive material layer. The method still further includes, performing rapid thermal processing to cause the first polysilicon layer, the second polysilicon layer and the conductive material layer to react.