Leuven, Belgium

Soichiro Okada

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Tokyo Electron Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Soichiro Okada. Retrieved from https://idiyas.com/inventor/soichiro-okada-pjfplutw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Soichiro Okada - Innovator in Heat-Treating Technologies

Introduction

Soichiro Okada is an inventor based in Leuven, Belgium. He has made significant contributions to the field of heat treatment technologies. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

1. **HEAT-TREATING METHOD, HEAT-TREATING APPARATUS, AND STORAGE MEDIUM** - This application describes a heat-treating method for a substrate with a metal-containing resist film. The method involves heating the substrate at a specific temperature to prevent the generation of a metal-containing sublimate. During this process, a reactive fluid with a higher concentration of carbon dioxide or moisture is supplied to enhance the reaction within the resist film.

2. **SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS** - This application outlines a substrate treatment method that includes developing a substrate with an inorganic resist coating. The process involves using a developing solution to create a pattern, filling spaces between protrusions with an embedding solution, and then drying it to form an embedded film. The thickness of this film is reduced using ultraviolet rays.

Conclusion

Soichiro Okada's work in heat-treating technologies showcases his innovative approach to substrate treatment methods. His latest patent applications reflect his commitment to advancing this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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