Siou-Cyun Lin

Title: Siou-Cyun Lin: Semiconductor Device Fabrication Inventor

Introduction

Siou-Cyun Lin is an inventor based in Tainan, Taiwan. He is associated with United Microelectronics Corporation and is named on 1 patent concerning semiconductor device fabrication.

Latest Patents

Lin’s listed patent, “Method for Fabricating a Semiconductor Device,” describes a process for building a semiconductor structure on a substrate. The method forms embedded bottom metal and sequentially stacked etch-stop and dielectric layers, then places a semiconductor element with a top plate and an etch-stop pad on the structure. An etching process creates two partial vias through the upper layers while keeping them separated from the bottom metal and top plate by specified layers.

Career Highlights

The available information identifies Lin’s work in semiconductor fabrication and his association with United Microelectronics Corporation. His patent focuses on layer formation and via etching in semiconductor devices.

Collaborations

Lin’s listed coworkers include Bao-Tzeng Huang and Yu-Hong Huang.

Conclusion

Siou-Cyun Lin’s patent documents a semiconductor fabrication method that uses carefully arranged dielectric and etch-stop layers to control the formation of partial vias.