Simone Rascuná

Title: Simone Rascuná: Innovator in Semiconductor Technology

Introduction

Simone Rascuná is a prominent inventor based in San Giovanni la Punta, Italy. She has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. Her work focuses on developing advanced electronic devices that utilize wide band gap semiconductors.

Latest Patents

Among her latest patents is the "Wide band gap semiconductor electronic device having a junction-barrier Schottky diode." This innovative device is formed by a body of wide band gap semiconductor with a first conductivity type, featuring a drift region and multiple surface portions. The design includes a plurality of first implanted regions with a second conductivity type, which extend into the drift region, creating Schottky diodes with varying barrier heights. Another notable patent is "Ohmic contact formation in a SiC-based electronic device." This method involves implanting P-type dopant species into an N-type SiC solid body and generating a laser beam to create a carbon-rich electrical-contact region, forming an ohmic contact.

Career Highlights

Simone Rascuná works at STMicroelectronics S.r.l., where she has been instrumental in advancing semiconductor technologies. Her expertise in the field has led to numerous innovations that enhance the performance and efficiency of electronic devices.

Collaborations

Throughout her career, Simone has collaborated with notable colleagues, including Mario Giuseppe Saggio and Gabriele Bellocchi. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Simone Rascuná's contributions to semiconductor technology exemplify her dedication to innovation and excellence. Her patents reflect her commitment to advancing electronic device capabilities, making her a key figure in the industry.