The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2024

Filed:

Mar. 09, 2023
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Simone Rascuná, Catania, IT;

Gabriele Bellocchi, Catania, IT;

Paolo Badalá, Acireale, IT;

Isodiana Crupi, Catania, IT;

Assignee:

STMICROELECTRONICS S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 31/0224 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1016 (2013.01); H01L 31/022408 (2013.01); H01L 31/022466 (2013.01); H01L 31/103 (2013.01); H01L 31/1812 (2013.01); H01L 31/1864 (2013.01); H01L 31/1884 (2013.01);
Abstract

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.


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