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Portland, OR, United States of America

Simon Yang

This inventor holds 17 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: Intel Corporation. Active years: 1993-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Simon Yang. Retrieved from https://idiyas.com/inventor/simon-yang-i0630t4t

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 17

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 7

Forward Citations = 516(Granted Patents)

Company Filing History:

17 out of 56,394

Intel Corporation

Years Active: 1993-2007

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Areas of Expertise:

Salicide Resistance

Polysilicon Gates

Trench Sidewalls

N2O Nitrided-Oxide

C4 Ball-Limiting Metallurgy

Aluminum Layer

Thin Spacers

Thick Spacers

Die-Package Interaction

Stress Prevention

Tri-Layer Titanium Coating

17 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7211872 - Device having recessed spacers for improved salicide resistance on polysilicon gates (2007-05-01),

2. 6777760 - Device with recessed thin and thick spacers for improved salicide resistance on polysilicon gates (2004-08-17),

3. 6740427 - Thermo-mechanically robust C4 ball-limiting metallurgy to prevent failure due to die-package interaction and method of making same (2004-05-25),

4. 6593633 - Method and device for improved salicide resistance on polysilicon gates (2003-07-15),

5. 6566727 - N2O nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stress (2003-05-20),

6. 6521964 - Device having spacers for improved salicide resistance on polysilicon gates (2003-02-18),

7. 6509618 - Device having thin first spacers and partially recessed thick second spacers for improved salicide resistance on polysilicon gates (2003-01-21),

8. 6506652 - Method of recessing spacers to improved salicide resistance on polysilicon gates (2003-01-14),

9. 6271096 - Method and device for improved salicide resistance on polysilicon gates (2001-08-07),

10. 6268254 - Method and device for improved salicide resistance on polysilicon gates (2001-07-31),

11. 6261925 - N2O Nitrided-oxide trench sidewalls to prevent boron outdiffusion and decrease stress (2001-07-17),

12. 6251762 - Method and device for improved salicide resistance on polysilicon gates (2001-06-26),

13. 6235598 - Method of using thick first spacers to improve salicide resistance on polysilicon gates (2001-05-22),

14. 6188117 - Method and device for improved salicide resistance on polysilicon gates (2001-02-13),

15. 5780346 - N.sub.2 O nitrided-oxide trench sidewalls and method of making isolation (1998-07-14),

Title: Inventor Simon Yang: Pioneering Innovations in Portland

Introduction: Simon Yang is a distinguished inventor based in Portland, Oregon, known for his groundbreaking contributions to various technological fields.

Latest Patents: Simon Yang holds several patents in the areas of renewable energy, sustainable materials, and smart home technologies, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a background in engineering and a passion for problem-solving, Simon Yang has successfully brought numerous inventions from concept to market, earning recognition for his creativity and ingenuity.

Collaborations: Throughout his career, Simon Yang has collaborated with leading research institutions, universities, and innovative companies to further develop his inventions and bring them to a wider audience, demonstrating his collaborative spirit and dedication to progress.

Conclusion: Simon Yang's relentless pursuit of innovation and his remarkable contributions to the world of technology make him a truly inspiring figure in the field of inventors.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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