The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2004
Filed:
Sep. 21, 2001
Applicant:
Inventors:
Madhav Datta, Portland, OR (US);
Dave Emory, Aloha, OR (US);
Tzeun-luh Huang, Portland, OR (US);
Subhash M. Joshi, Beaverton, OR (US);
Christine A. King, Gilbert, AZ (US);
Zhiyong Ma, Beaverton, OR (US);
Thomas Marieb, Portland, OR (US);
Michael Mckeag, Aloha, OR (US);
Doowon Suh, Warren, OR (US);
Simon Yang, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B32B 1/501 ; C25D 5/10 ;
U.S. Cl.
CPC ...
B32B 1/501 ; C25D 5/10 ;
Abstract
The invention relates to a ball limiting metallurgy stack for an electrical device that contains a tin diffusion barrier and thermo-mechanical buffer layer disposed upon a refractory metal first layer. The multi-diffusion barrier layer stack resists tin migration toward the upper metallization of the device.